10n65 1 / 9 may.2015-rev.00 www.dyelec.com 1. gate 2. drain 3. source pin definition: product summary v ds (v) r ds(on) ( ?) i d (a) 650 1 @ v gs =10v 10 650v n-channel power mosfet absolute maximum ratings (t c =25c, unless otherwise specified) r ds(on) <1? @ v gs =10v fast switching capability low gate charge lead free in compliance with eu rohs directive. green molding compound block diagram ordering information case: to-220,ito-220 package d g s parameter symbol ratings unit drain-source voltage v dss 650 v gate-source voltage v gss 30 v continuous drain current i d 10 a pulsed drain current (note 2) i dm 3 8 a avalanche energy single pulsed (note 3) e as 608 mj power dissipation to-220/to-262/to-263 p d 156 w ito-220 50 w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limited by t j 3. l = 30mh, i as = 6.2a, v dd = 50v, r g = 25 ?, st arting t j = 25c part no. package packing dmt10n65-tu to-220 50pcs / tube dmf10n65-tu ito-220 50pcs / tube dmk10n65-tu to-262 50pcs / tube DMG10N65-TU to-263 50pcs / tube DMG10N65-TU to-263 800pcs / 13" reel
2 / 9 thermal data 10n65 650v n-channel power mosfet electrical characteristics (t c =25c, unless otherwise specified) parameter symbol rating unit junction to ambient to-220/ito-220 to-262/to-263 ja 62.5 c/w junction to case to-220 jc 0.85 c/w i to-220 2.6 parameter symbol t est conditions typmin max unit off characteristics drain-source breakdown voltage bv dss gs v =0v, i d =250 a 650 v drain-source leakage current i dss gate- source leakage current forward i gss v g= 30v, v ds =0v 100 na reverse v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) ds v =v gs , i d =250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) 0.88 1.0 ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0 mhz 1200 pf output capacitance c oss pf 166 reverse transfer capacitance c rss 8 pf switching characteristics turn-on delay time t d( on ) 40 ns turn-on rise time t r ns 74 turn-off delay time t d( off ) 52 ns turn-off fall time t f 35 ns total gate charge q g 24 nc gate-source charge q gs nc 8 gate-drain charge q gd 7 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd 1.4 v maximum continuous drain-source diode forward current i s 10 a maximum pulsed drain-source diode forward current i sm 40 a reverse recovery time t rr v gs =0v, i s =10a, di f /dt = 100 a/ s (note 1) 570 ns reverse recovery charge q rr c 4.7 notes: 1. pulse test: pulse width 300 s, duty cycle 2%. 2. essentially independent of operating temperature. may.2015-rev.00 www.dyelec.com v dd =325v, i d =10a, r g =25? (note 1, 2) v ds =520v, i d =10a, v gs =10v (note 1, 2) v ds =65 1 a 9 * 6 9 , ' $ * 6 9 9 , 6 $
3 / 9 test circ uits and waveforms 650v n-channel power mosfet same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * sd controlled by pulse period * d.u.t.-d vice under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms may.2015-rev.00 www.dyelec.com 10n65
4 / 9 test circuits and waveforms(cont.) 650v n-channel power mosfet jan.2015-rev.0 0 www.sddydz.com may.2015-rev.00 www.dyelec.com 10n65 v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
5 / 9 typical characteristics 650v n-channel power mosfet may.2015-rev.00 www.dyelec.com 10n65 output characteristics transfer characteristics on -resistance vs. drain current source-drain diode forward voltage capacitance vs. drain-source voltage gate charge
typical characteristics 650v n-channel power mosfet 10n65 6 / 9 may.2015-rev.00 www.dyelec.com bv dss vs. junction temperature on -resistance vs. junction temperature threshold voltage variation with temperature maximum safe operating area maximum safe operating area
7 / 9 650v n-channel power mosfet may.2015-rev.00 www.dyelec.com 10n65 t o - 220 mechanical drawing t o - 220 mechanical drawing it o-220 m echanical drawing
10n65 650v n-channel power mosfet 8 / 9 may,2015-rev.0 0 www.dyelec.com to-2 62 mechanical drawing to-263 mechanical drawing
9 / 9 notice specifications of the products displayed herein are subject to change without notice. diyi or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in diyi s terms and conditions of sale for such products, diyi assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of diyi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify diyi for any damages resulting from such improper use or sale. 650v n-channel power mosfet apr.2015-rev.00 www.dy elec.com 10n65
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